El Eslèk

Reference : P2530102

Experimental principle

The resistivity and Hall voltage of rectangular samples of n- and p-doped germanium are measured as a function of temperature and magnetic flux density. These measurements are used to determine the band gap, electrical conductivity, type of charge carriers, and carrier mobility.

Experimental objectives

Measurement of the Hall voltage as a function of the control current

At room temperature and at a constant magnetic flux density, the Hall voltage is measured as a function of the control current. The results are plotted graphically. This measurement is performed without compensation for any possible offset voltage.

Measurement of the sample voltage as a function of magnetic flux density

At room temperature and with a constant control current, the voltage across the sample is measured as a function of the magnetic flux density B.

Measurement of the voltage as a function of temperature

With a constant control current, the voltage across the sample is measured as a function of temperature. These measurements are used to calculate the band gap of germanium.

Determination of Hall parameters

At room temperature, the Hall voltage U_H is measured as a function of the magnetic flux density B. These measurements are used to determine the sign of the charge carriers, as well as the Hall coefficient R_H, Hall mobility μ_H, and charge-carrier concentration.

Measurement of the Hall voltage as a function of temperature

The Hall voltage U_H is measured as a function of temperature at a constant magnetic flux density B. The results are then plotted to study the temperature dependence of the Hall effect.