- New
P2530102 – Hall Effect in n- and p-Doped Germanium Using a Teslameter
Reference : P2530102
Experimental principle
The resistivity and Hall voltage of rectangular samples of n- and p-doped germanium are measured as a function of temperature and magnetic flux density. These measurements are used to determine the band gap, electrical conductivity, type of charge carriers, and carrier mobility.
Experimental objectives
Measurement of the Hall voltage as a function of the control current
At room temperature and at a constant magnetic flux density, the Hall voltage is measured as a function of the control current. The results are plotted graphically. This measurement is performed without compensation for any possible offset voltage.
Measurement of the sample voltage as a function of magnetic flux density
At room temperature and with a constant control current, the voltage across the sample is measured as a function of the magnetic flux density B.
Measurement of the voltage as a function of temperature
With a constant control current, the voltage across the sample is measured as a function of temperature. These measurements are used to calculate the band gap of germanium.
Determination of Hall parameters
At room temperature, the Hall voltage UH is measured as a function of the magnetic flux density B. These measurements are used to determine the sign of the charge carriers, as well as the Hall coefficient RH, Hall mobility μH, and charge-carrier concentration.
Measurement of the Hall voltage as a function of temperature
The Hall voltage UH is measured as a function of temperature at a constant magnetic flux density B. The results are then plotted to study the temperature dependence of the Hall effect.
Equipment
Modules and samples
- 1× 11801-01 – Basic Hall Effect Module HU 2
- 1× 11805-01 – Hall Effect Plate, p-doped germanium
- 1× 11802-01 – Hall Effect Plate, n-doped germanium
Magnetic field generation system
- 2× 06514-01 – Coil, 600 turns
- 1× 06501-00 – U-core, laminated magnetic sheets
- 1× 06489-00 – Pair of flat pole pieces, 30 × 30 × 48 mm
Power supply and measuring instruments
- 1× 13506-93 – DC power supply: 0 to 12 V, 2 A / AC: 6 V, 12 V, 5 A
- 1× 13610-93 – Digital teslameter
- 1× 13610-02 – Tangential Hall probe with protective cap
- 1× 07122-00 – 3½-digit digital multimeter with NiCr-Ni thermocouple
Mounting equipment and cables
- 1× 02002-55 – Tripod base for one support rod
- 1× 02031-00 – Stainless-steel support rod, 250 mm
- 1× 02054-00 – Expert double bosshead
- 3× 07361-01 – Connecting cable, 500 mm, red
- 2× 07361-04 – Connecting cable, 500 mm, blue
- 2× 07362-05 – Connecting cable, 750 mm, black
P2530102
Specific References
Reference : P2530102
Experimental principle
The resistivity and Hall voltage of rectangular samples of n- and p-doped germanium are measured as a function of temperature and magnetic flux density. These measurements are used to determine the band gap, electrical conductivity, type of charge carriers, and carrier mobility.
Experimental objectives
Measurement of the Hall voltage as a function of the control current
At room temperature and at a constant magnetic flux density, the Hall voltage is measured as a function of the control current. The results are plotted graphically. This measurement is performed without compensation for any possible offset voltage.
Measurement of the sample voltage as a function of magnetic flux density
At room temperature and with a constant control current, the voltage across the sample is measured as a function of the magnetic flux density B.
Measurement of the voltage as a function of temperature
With a constant control current, the voltage across the sample is measured as a function of temperature. These measurements are used to calculate the band gap of germanium.
Determination of Hall parameters
At room temperature, the Hall voltage UH is measured as a function of the magnetic flux density B. These measurements are used to determine the sign of the charge carriers, as well as the Hall coefficient RH, Hall mobility μH, and charge-carrier concentration.
Measurement of the Hall voltage as a function of temperature
The Hall voltage UH is measured as a function of temperature at a constant magnetic flux density B. The results are then plotted to study the temperature dependence of the Hall effect.